Trap-state mapping to model GaN transistors dynamic performance

Effect of GaN/AlGaN Buffer Thickness on the Electrothermal Performance of AlGaN/GaN High Electron Mobility Transistors on Engineered Substrates - Tadjer - 2023 - physica status solidi (a) - Wiley Online Library

Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling

Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics

Trapping phenomena and degradation mechanisms in GaN-based power HEMTs - ScienceDirect

A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

Trapping phenomena and degradation mechanisms in GaN-based power HEMTs - ScienceDirect

Electronics, Free Full-Text

Germanium‐based monoelemental and binary two‐dimensional materials: Theoretical and experimental investigations and promising applications - Zhao - 2022 - InfoMat - Wiley Online Library